{ "schema_version": "1.0.0", "published_at": "2026-07-16T03:54:36+08:00", "data_as_of": "2026-07-16", "methodology": { "title_zh": "CWW 存储产业链关系图谱：公开证据方法", "title_en": "CWW Memory Supply-Chain Graph: Public-Evidence Method", "scope_zh": "本首发数据集围绕三星电子、SK海力士和长鑫存储三条记名链，收录公司公告、公司产品页、监管文件或政府公告明确点名的关系。链是可重叠的分析视图，不是股权族谱、指数纳入名单或完整供应商名录。", "scope_en": "This initial dataset covers three named views anchored on Samsung Electronics, SK hynix and CXMT. A relationship is included only when a company release, product page, regulatory filing or government announcement names both parties. Chains are overlapping analytical views, not a corporate family tree, an index-eligibility list or a complete vendor roster.", "inclusion_rule_zh": "每条边必须至少有一条第一方或权威监管/政府来源；证据必须支持被标注的关系类型、方向和时间，不以媒体传闻补齐客户、供应商、份额或排他性。", "inclusion_rule_en": "Every edge must carry at least one first-party or authoritative regulatory/government source. Evidence must support the stated relationship type, direction and date; media reports are not used to fill undisclosed customers, suppliers, shares or exclusivity.", "direction_rule_zh": "source 与 target 仅在证据支持产品、服务、许可或控制流向时表示方向；共同研发、验证和战略合作会在 direction_semantics 中明确为双向或仅用于展示顺序。", "direction_rule_en": "source and target encode direction only when evidence supports a product, service, licence or control flow. Joint development, validation and strategic cooperation are explicitly marked as bidirectional or display-order-only in direction_semantics.", "confidence_scale": { "high_zh": "第一方或监管/政府文件直接点名双方并描述关系。", "high_en": "A first-party or regulatory/government document directly names both parties and describes the relationship.", "medium_zh": "第一方来源点名双方，但商业流向、范围或持续性只得到部分说明。", "medium_en": "A first-party source names both parties, but commercial direction, scope or continuity is only partially described.", "low_zh": "不进入公开图谱；仅作为待核验候选。", "low_en": "Not published in the graph; retained only as a verification candidate." }, "exclusions_zh": [ "不推断未披露客户或供应商", "不推断采购份额、收入贡献、产能分配或排他性", "不把同处一个技术生态等同于商业合同", "不根据媒体传闻或匿名消息建立边", "不建立政治、血缘或未经披露的控制关系" ], "exclusions_en": [ "No inference of undisclosed customers or suppliers", "No inference of procurement share, revenue contribution, capacity allocation or exclusivity", "Technology-ecosystem proximity is not treated as a commercial contract", "No edges based on media rumours or anonymous sourcing", "No political, genealogical or undisclosed-control relationships" ], "update_policy_zh": "新增或改动边时必须保存可公开访问的第一方/监管来源、发布日期、页面定位和关系时点；若新来源否定旧关系，应保留历史边并标明结束时间，而不是静默覆盖。", "update_policy_en": "Any new or changed edge must retain a publicly accessible first-party/regulatory source, publication date, locator and relationship date. If later evidence supersedes a relationship, preserve the historical edge with an end date instead of silently overwriting it." }, "chains": [ { "key": "samsung_memory_chain", "name_zh": "三星存储链", "name_en": "Samsung Memory Chain", "description_zh": "从EUV联合研发到HBM/DDR5下游平台和CXL软硬件生态的公开连接。ASML关系是共同研发，不等同于本图披露采购份额；AMD关系含明确HBM供给；红帽与澜起关系属于验证或技术生态合作。", "description_en": "Publicly disclosed links spanning joint EUV R&D, HBM/DDR5 downstream platforms and the CXL hardware-software ecosystem. The ASML link is joint R&D rather than disclosed procurement share; the AMD link includes explicit HBM supply; Red Hat and Montage are validation/technology-ecosystem relationships.", "anchor_node_ids": ["samsung-electronics"], "node_ids": ["asml", "samsung-electronics", "amd", "red-hat", "montage-technology"], "edge_ids": ["asml-samsung-joint-euv-rd", "samsung-amd-hbm-supply", "samsung-redhat-cxl-validation", "samsung-montage-cxl-partnership"] }, { "key": "sk_hynix_memory_hbm_chain", "name_zh": "SK海力士存储与HBM链", "name_en": "SK hynix Memory and HBM Chain", "description_zh": "覆盖HBM4基础裸片/先进封装合作、HBM3下游系统供给、NAND到企业级SSD的子公司连接，以及一项设备/材料/学术共同参与的前沿存储研发。", "description_en": "Covers HBM4 base-die and advanced-packaging collaboration, disclosed HBM3 downstream system supply, the NAND-to-enterprise-SSD subsidiary link, and one forward-looking memory R&D collaboration spanning equipment, materials and academia.", "anchor_node_ids": ["sk-hynix"], "node_ids": ["lam-research", "tsmc", "sk-hynix", "nvidia", "solidigm"], "edge_ids": ["skhynix-tsmc-hbm4-rd", "skhynix-nvidia-hbm3-supply", "skhynix-solidigm-subsidiary", "lam-skhynix-neuromorphic-rd"] }, { "key": "cxmt_changxin_memory_chain", "name_zh": "长鑫存储链", "name_en": "CXMT / ChangXin Memory Chain", "description_zh": "以长鑫存储为未上市锚点，连接公开披露的DRAM专利许可、与兆易创新的代工/产品采购及共同开发关系，以及LPDDR5客户验证。该链不包含未经第一方证实的HBM客户或设备供应商。", "description_en": "Uses unlisted CXMT as the anchor and connects disclosed DRAM patent licences, foundry/product procurement and joint development with GigaDevice, plus LPDDR5 customer validation. It excludes unconfirmed HBM customers and equipment suppliers.", "anchor_node_ids": ["cxmt"], "node_ids": ["rambus", "polaris-innovations", "cxmt", "gigadevice", "xiaomi", "transsion"], "edge_ids": ["rambus-cxmt-dram-license", "polaris-cxmt-dram-license-acquisition", "cxmt-gigadevice-dram-provision", "gigadevice-cxmt-joint-development-ip", "cxmt-xiaomi-lpddr5-validation", "cxmt-transsion-lpddr5-validation"] } ], "nodes": [ { "id": "samsung-electronics", "ticker": "005930.KS", "name_zh": "三星电子", "name_en": "Samsung Electronics", "market": "韩国", "role": "memory_idm", "stage": "anchor", "technology_tags": ["HBM", "DRAM", "NAND", "CXL", "SSD"], "summary_zh": "三星电子存储链锚点；公开来源覆盖HBM4/HBM3E供给、DDR5协同、CXL内存验证及EUV工艺联合研发。", "summary_en": "Samsung memory-chain anchor with disclosed HBM4/HBM3E supply, DDR5 collaboration, CXL memory validation and joint EUV process R&D.", "evidence": [{ "title_zh": "三星与AMD签署下一代AI存储合作备忘录", "title_en": "Samsung and AMD signed an MOU for next-generation AI memory", "source_title": "Samsung and AMD Expand Strategic Collaboration on Next-Generation AI Memory Solutions", "source_type": "company_press_release", "published_at": "2026-03-18", "source_url": "https://news.samsung.com/global/samsung-and-amd-expand-strategic-collaboration-on-next-generation-ai-memory-solutions", "locator": "Headline and paragraphs describing primary HBM4 supply, DDR5 cooperation and existing HBM3E partnership", "confidence": "high" }] }, { "id": "asml", "ticker": "ASML.AS", "name_zh": "阿斯麦", "name_en": "ASML", "market": "欧洲", "role": "lithography_equipment_and_process_technology", "stage": "upstream", "technology_tags": ["EUV", "SEMICONDUCTOR_EQUIPMENT"], "summary_zh": "EUV设备与工艺技术节点；韩国政府公告披露其与三星电子共同投资建设下一代EUV工艺研究设施。", "summary_en": "EUV equipment and process-technology node; a Korean government announcement disclosed joint investment with Samsung Electronics in a next-generation EUV process research facility.", "evidence": [{ "title_zh": "政府公告确认三星与ASML共同投资EUV研究设施", "title_en": "Government announcement confirms Samsung-ASML joint EUV research investment", "source_title": "한·네 첨단반도체 아카데미 신설…삼성전자·ASML, 1조 원 공동투자", "source_type": "government_announcement", "published_at": "2023-12-13", "source_url": "https://www.korea.kr/news/policyNewsView.do?newsId=148923725", "locator": "Paragraphs 244-255: ASML description and joint KRW 1 trillion research-fab agreement", "confidence": "high" }] }, { "id": "amd", "ticker": "AMD", "name_zh": "AMD", "name_en": "Advanced Micro Devices", "market": "美国", "role": "ai_accelerator_and_server_cpu_platform", "stage": "downstream", "technology_tags": ["HBM3E", "HBM4", "DDR5", "AI_ACCELERATOR"], "summary_zh": "三星HBM与DDR5公开下游平台节点；官方公告明确三星为AMD HBM3E主要合作方并规划HBM4供给。", "summary_en": "Disclosed downstream platform for Samsung HBM and DDR5; the official announcement names Samsung as AMD's primary HBM3E partner and aligns the parties on HBM4 supply.", "evidence": [{ "title_zh": "AMD Instinct与EPYC平台采用三星HBM/DDR5合作路线", "title_en": "AMD Instinct and EPYC platforms are covered by Samsung HBM/DDR5 collaboration", "source_title": "Samsung and AMD Expand Strategic Collaboration on Next-Generation AI Memory Solutions", "source_type": "company_press_release", "published_at": "2026-03-18", "source_url": "https://news.samsung.com/global/samsung-and-amd-expand-strategic-collaboration-on-next-generation-ai-memory-solutions", "locator": "Paragraphs 82-97: HBM4 supply, DDR5 optimization and HBM3E partner disclosure", "confidence": "high" }] }, { "id": "red-hat", "ticker": null, "name_zh": "红帽", "name_en": "Red Hat", "market": "美国", "role": "enterprise_linux_and_memory_software_ecosystem", "stage": "ecosystem", "technology_tags": ["CXL", "LINUX", "NVME_SSD", "COMPUTATIONAL_MEMORY"], "summary_zh": "三星CXL内存的软件验证与开源生态伙伴；该节点表示互操作验证，不表示采购关系。", "summary_en": "Software-validation and open-source ecosystem partner for Samsung CXL memory; this node represents interoperability work, not a procurement relationship.", "evidence": [{ "title_zh": "三星CXL内存在RHEL 9.3环境完成互操作验证", "title_en": "Samsung CXL memory completed interoperability validation in RHEL 9.3", "source_title": "Samsung Electronics and Red Hat Partnership To Lead Expansion of CXL Memory Ecosystem With Key Milestone", "source_type": "company_press_release", "published_at": "2023-12-27", "source_url": "https://news.samsung.com/global/samsung-electronics-and-red-hat-partnership-to-lead-expansion-of-cxl-memory-ecosystem-with-key-milestone", "locator": "Paragraphs 87-93: RHEL 9.3 verification, enabling guide and 2022 MOU scope", "confidence": "high" }] }, { "id": "montage-technology", "ticker": "688008.SS", "name_zh": "澜起科技", "name_en": "Montage Technology", "market": "中国内地", "role": "memory_interface_and_cxl_controller", "stage": "ecosystem", "technology_tags": ["CXL", "MEMORY_CONTROLLER", "INTERFACE_CHIP"], "summary_zh": "CXL 2.0控制器与内存接口生态节点；三星公告直接引用澜起继续与三星推进CXL技术和生态。", "summary_en": "CXL 2.0 controller and memory-interface ecosystem node; Samsung's release directly quotes Montage on continuing its partnership with Samsung to advance CXL technology.", "evidence": [{ "title_zh": "澜起与三星继续推进CXL 2.0控制器生态", "title_en": "Montage and Samsung continue advancing the CXL 2.0 controller ecosystem", "source_title": "Samsung Develops Industry’s First CXL DRAM Supporting CXL 2.0", "source_type": "company_product_release", "published_at": "2023-05-12", "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-cxl-dram-supporting-cxl-2-0", "locator": "Paragraph 91: Montage president cites controller mass production and continuing partnership with Samsung", "confidence": "high" }] }, { "id": "sk-hynix", "ticker": "000660.KS", "name_zh": "SK海力士", "name_en": "SK hynix", "market": "韩国", "role": "memory_idm", "stage": "anchor", "technology_tags": ["HBM", "DRAM", "NAND", "ENTERPRISE_SSD"], "summary_zh": "SK海力士存储与HBM链锚点；公开关系覆盖HBM4基础裸片/封装合作、HBM3系统供给和NAND/企业级SSD整合。", "summary_en": "SK hynix memory/HBM-chain anchor with disclosed HBM4 base-die and packaging collaboration, HBM3 system supply and NAND/enterprise-SSD integration.", "evidence": [{ "title_zh": "SK海力士与台积电签署HBM4及先进封装合作备忘录", "title_en": "SK hynix and TSMC signed an MOU for HBM4 and advanced packaging", "source_title": "SK hynix Partners with TSMC to Strengthen HBM Technological Leadership", "source_type": "company_press_release", "published_at": "2024-04-19", "source_url": "https://news.skhynix.com/sk-hynix-partners-with-tsmc-to-strengthen-hbm-technological-leadership/", "locator": "News Highlights and paragraphs 67-72: HBM4 base die, CoWoS integration and common-customer response", "confidence": "high" }] }, { "id": "tsmc", "ticker": "2330.TW", "name_zh": "台积电", "name_en": "Taiwan Semiconductor Manufacturing Company", "market": "中国台湾", "role": "logic_foundry_and_advanced_packaging", "stage": "upstream", "technology_tags": ["HBM4", "LOGIC_BASE_DIE", "COWOS", "ADVANCED_PACKAGING"], "summary_zh": "SK海力士HBM4逻辑基础裸片与CoWoS先进封装合作节点；关系为明确的共同开发，不代表披露采购份额。", "summary_en": "SK hynix partner for HBM4 logic base dies and CoWoS advanced packaging; the relationship is explicit co-development, not a disclosed procurement share.", "evidence": [{ "title_zh": "台积电先进逻辑工艺与CoWoS进入SK海力士HBM4合作", "title_en": "TSMC advanced logic and CoWoS enter SK hynix HBM4 collaboration", "source_title": "SK hynix Partners with TSMC to Strengthen HBM Technological Leadership", "source_type": "company_press_release", "published_at": "2024-04-19", "source_url": "https://news.skhynix.com/sk-hynix-partners-with-tsmc-to-strengthen-hbm-technological-leadership/", "locator": "News Highlights and paragraphs 67-72: foundry process, base die and CoWoS integration", "confidence": "high" }] }, { "id": "nvidia", "ticker": "NVDA", "name_zh": "英伟达", "name_en": "NVIDIA", "market": "美国", "role": "ai_accelerator_and_compute_platform", "stage": "downstream", "technology_tags": ["HBM3", "GPU", "AI_ACCELERATOR"], "summary_zh": "SK海力士HBM3的记名下游系统节点；2022年官方公告明确性能验证、H100集成和供给计划，时点仅代表该次披露。", "summary_en": "Named downstream system node for SK hynix HBM3; the 2022 official release explicitly covered evaluation, H100 integration and supply plans, and is time-bounded to that disclosure.", "evidence": [{ "title_zh": "SK海力士披露HBM3将供给英伟达系统", "title_en": "SK hynix disclosed HBM3 supply for NVIDIA systems", "source_title": "SK hynix to Supply Industry’s First HBM3 DRAM to NVIDIA", "source_type": "company_press_release", "published_at": "2022-06-08", "source_url": "https://news.skhynix.com/sk-hynix-to-supply-industrys-first-hbm3-dram-to-nvidia/", "locator": "News Highlights and paragraphs naming NVIDIA H100, completed sample evaluation and planned system supply", "confidence": "high" }] }, { "id": "solidigm", "ticker": null, "name_zh": "Solidigm", "name_en": "Solidigm", "market": "美国", "role": "enterprise_ssd_subsidiary", "stage": "downstream", "technology_tags": ["NAND", "ENTERPRISE_SSD", "SSD_CONTROLLER", "FIRMWARE"], "summary_zh": "SK海力士旗下企业级SSD节点；官方公告披露其承接英特尔SSD业务，并与SK海力士将NAND、控制器和固件组合为联合产品。", "summary_en": "Enterprise-SSD node under SK hynix; official releases describe the transferred Intel SSD business and a joint product combining SK hynix NAND with Solidigm controller and firmware expertise.", "evidence": [{ "title_zh": "Solidigm作为SK海力士美国子公司承接SSD业务", "title_en": "Solidigm formed as the SK hynix U.S. subsidiary managing the acquired SSD business", "source_title": "SK hynix completes the First Phase of Intel NAND and SSD Business Acquisition", "source_type": "company_press_release", "published_at": "2021-12-30", "source_url": "https://news.skhynix.com/sk-hynix-completes-the-first-phase-of-intel-nand-and-ssd-business-acquisition/", "locator": "Paragraphs 62-80: acquisition, Solidigm formation, subsidiary status and SSD role", "confidence": "high" }] }, { "id": "lam-research", "ticker": "LRCX", "name_zh": "Lam Research", "name_en": "Lam Research", "market": "美国", "role": "wafer_fabrication_equipment", "stage": "upstream", "technology_tags": ["SEMICONDUCTOR_EQUIPMENT", "FERROELECTRIC_MEMORY_R_AND_D", "DEPOSITION", "ETCH"], "summary_zh": "晶圆制造设备节点；2016年SK海力士公告点名其参加铁电人工神经网络器件共同研发，不能据此推断常规设备采购份额。", "summary_en": "Wafer-fabrication equipment node named in a 2016 SK hynix release as a participant in ferroelectric artificial-neural-network-device R&D; this does not disclose ordinary equipment procurement share.", "evidence": [{ "title_zh": "Lam参加SK海力士牵头的铁电存储器件研发合作", "title_en": "Lam joined SK hynix's ferroelectric memory-device R&D collaboration", "source_title": "SK hynix Inc. Enters Global Collaboration to Develop Artificial Neural Network Devices", "source_type": "company_press_release", "published_at": "2016-10-13", "source_url": "https://news.skhynix.com/sk-hynix-inc-enters-global-collaboration-to-develop-artificial-neural-network-devices/", "locator": "Paragraphs 56-71: parties, research scope and joint-R&D description; paragraph 77 identifies Lam's equipment role", "confidence": "high" }] }, { "id": "cxmt", "ticker": null, "name_zh": "长鑫存储", "name_en": "ChangXin Memory Technologies (CXMT)", "market": "中国内地", "role": "dram_idm", "stage": "anchor", "technology_tags": ["DRAM", "DDR5", "DDR4", "LPDDR5X", "LPDDR5"], "summary_zh": "长鑫存储链未上市锚点；公司自述覆盖DRAM设计、研发、制造和销售，图谱仅收录已公开点名的许可、代工/采购、共同开发和客户验证。", "summary_en": "Unlisted anchor of the CXMT chain. The company describes itself as covering DRAM design, R&D, manufacturing and sales; this graph includes only named public disclosures of licensing, foundry/procurement, joint development and customer validation.", "evidence": [{ "title_zh": "长鑫官网明确其DRAM设计、制造、销售与研发定位", "title_en": "CXMT's official site defines its DRAM design, manufacturing, sales and R&D role", "source_title": "About CXMT", "source_type": "company_about_page", "published_at": null, "source_url": "https://www.cxmt.com/en/about.html", "locator": "About CXMT, paragraphs 93-95; company history paragraphs 120-139", "confidence": "high" }] }, { "id": "rambus", "ticker": "RMBS", "name_zh": "Rambus", "name_en": "Rambus", "market": "美国", "role": "memory_ip_licensor", "stage": "upstream", "technology_tags": ["DRAM_IP", "MEMORY_INTERFACE_IP"], "summary_zh": "DRAM知识产权上游节点；长鑫官方公告确认获得Rambus广泛DRAM专利许可。", "summary_en": "Upstream DRAM intellectual-property node; CXMT's official announcement confirms a licence to a broad set of Rambus DRAM patents.", "evidence": [{ "title_zh": "Rambus向长鑫许可DRAM专利", "title_en": "Rambus licensed DRAM patents to CXMT", "source_title": "CXMT and Rambus Inc. Signed Patent License Agreement", "source_type": "company_press_release", "published_at": "2023-02-09", "source_url": "https://www.cxmt.com/en/news/info_4.html", "locator": "Paragraph 93: April 2020 agreement and wide range of DRAM patents", "confidence": "high" }] }, { "id": "polaris-innovations", "ticker": null, "name_zh": "Polaris Innovations", "name_en": "Polaris Innovations Limited", "market": "加拿大", "role": "dram_ip_licensor", "stage": "upstream", "technology_tags": ["DRAM_IP", "QIMONDA_PATENTS"], "summary_zh": "WiLAN旗下DRAM知识产权节点；长鑫公告披露双方就奇梦达DRAM专利签署许可与独立专利收购协议。", "summary_en": "DRAM IP node under WiLAN; CXMT disclosed patent-licence and separate patent-acquisition agreements covering former Qimonda DRAM patents.", "evidence": [{ "title_zh": "Polaris与长鑫签署DRAM专利许可及收购协议", "title_en": "Polaris and CXMT entered DRAM patent licence and acquisition agreements", "source_title": "CXMT and WiLAN Subsidiary Had License and Acquisition Agreements", "source_type": "company_press_release", "published_at": "2023-02-09", "source_url": "https://www.cxmt.com/en/news/info_5.html", "locator": "Paragraph 92: December 2019 licence and acquisition agreements for Qimonda DRAM patents", "confidence": "high" }] }, { "id": "gigadevice", "ticker": "603986.SS", "name_zh": "兆易创新", "name_en": "GigaDevice Semiconductor", "market": "中国内地", "role": "fabless_memory_designer_and_dram_customer", "stage": "ecosystem", "technology_tags": ["NOR_FLASH", "SLC_NAND", "NICHE_DRAM", "MCU"], "summary_zh": "与长鑫存在双向技术/商业连接的无晶圆厂芯片公司：监管文件披露长鑫提供DRAM和代工服务，兆易向长鑫许可IP并参与共同产品开发。", "summary_en": "Fabless chip company with two-way technical/commercial links to CXMT: a regulatory filing discloses DRAM and foundry services from CXMT and IP licensing/joint product development from GigaDevice to CXMT.", "evidence": [{ "title_zh": "监管文件披露兆易与长鑫的DRAM供给、代工及共同开发", "title_en": "Regulatory filing discloses GigaDevice-CXMT DRAM provision, foundry and joint development", "source_title": "GigaDevice Semiconductor Inc. — Application Proof, Business (HKEX)", "source_type": "regulatory_filing", "published_at": "2026-01-13", "source_url": "https://www1.hkexnews.hk/listedco/listconews/sehk/2026/0113/11988448/sehk25121902198.pdf", "locator": "Business pages 221-226: Relationship with CXMT, DRAM Provision Agreements and joint product development", "confidence": "medium" }] }, { "id": "xiaomi", "ticker": "1810.HK", "name_zh": "小米集团", "name_en": "Xiaomi Corporation", "market": "中国香港", "role": "consumer_device_oem", "stage": "downstream", "technology_tags": ["LPDDR5", "MOBILE_DEVICE"], "summary_zh": "长鑫LPDDR5的记名客户验证节点；只表示产品验证，不披露采购量、份额或独家关系。", "summary_en": "Named customer-validation node for CXMT LPDDR5; it indicates product validation only and does not disclose purchase volume, share or exclusivity.", "evidence": [{ "title_zh": "长鑫LPDDR5获得小米客户验证", "title_en": "CXMT LPDDR5 received customer validation from Xiaomi", "source_title": "CXMT unveils LPDDR5 product lineup", "source_type": "company_product_release", "published_at": "2023-11-28", "source_url": "https://www.cxmt.com/en/news/info_15.html", "locator": "Paragraph 92: CXMT states that 12GB LPDDR5 DRAM received validation from customers including Xiaomi", "confidence": "high" }] }, { "id": "transsion", "ticker": "688036.SS", "name_zh": "传音控股", "name_en": "Transsion Holdings", "market": "中国内地", "role": "consumer_device_oem", "stage": "downstream", "technology_tags": ["LPDDR5", "MOBILE_DEVICE"], "summary_zh": "长鑫LPDDR5的记名客户验证节点；只表示产品验证，不披露采购量、份额或独家关系。", "summary_en": "Named customer-validation node for CXMT LPDDR5; it indicates product validation only and does not disclose purchase volume, share or exclusivity.", "evidence": [{ "title_zh": "长鑫LPDDR5获得传音客户验证", "title_en": "CXMT LPDDR5 received customer validation from Transsion", "source_title": "CXMT unveils LPDDR5 product lineup", "source_type": "company_product_release", "published_at": "2023-11-28", "source_url": "https://www.cxmt.com/en/news/info_15.html", "locator": "Paragraph 92: CXMT states that 12GB LPDDR5 DRAM received validation from customers including Transsion", "confidence": "high" }] } ], "edges": [ { "id": "asml-samsung-joint-euv-rd", "source": "asml", "target": "samsung-electronics", "type": "joint_research_and_development", "label_zh": "共同投资建设下一代EUV工艺研究设施", "label_en": "Joint investment in a next-generation EUV process research facility", "as_of": "2023-12-13", "confidence": "high", "direction_semantics": "bidirectional_collaboration; source-target order is display-only and does not encode equipment purchase share", "evidence": [{ "title_zh": "三星与ASML签署约1万亿韩元研究设施协议", "title_en": "Samsung and ASML signed an agreement for an approximately KRW 1 trillion research facility", "source_title": "한·네 첨단반도체 아카데미 신설…삼성전자·ASML, 1조 원 공동투자", "source_type": "government_announcement", "published_at": "2023-12-13", "source_url": "https://www.korea.kr/news/policyNewsView.do?newsId=148923725", "locator": "Paragraphs 244-255: joint investment and research fab using next-generation EUV equipment", "confidence": "high" }] }, { "id": "samsung-amd-hbm-supply", "source": "samsung-electronics", "target": "amd", "type": "direct_supplier_customer_disclosure", "label_zh": "HBM3E主要合作与下一代AMD加速器HBM4供给协同", "label_en": "Primary HBM3E partnership and aligned HBM4 supply for next-generation AMD accelerators", "as_of": "2026-03-18", "confidence": "high", "direction_semantics": "source_to_target_product_flow; Samsung is the disclosed memory supplier/partner and AMD is the named compute-platform recipient", "evidence": [{ "title_zh": "三星与AMD明确HBM4供给及HBM3E既有合作", "title_en": "Samsung and AMD disclosed HBM4 supply alignment and the existing HBM3E partnership", "source_title": "Samsung and AMD Expand Strategic Collaboration on Next-Generation AI Memory Solutions", "source_type": "company_press_release", "published_at": "2026-03-18", "source_url": "https://news.samsung.com/global/samsung-and-amd-expand-strategic-collaboration-on-next-generation-ai-memory-solutions", "locator": "Paragraphs 82-97: primary HBM4 supply, DDR5 cooperation and primary HBM3E partner disclosure", "confidence": "high" }] }, { "id": "samsung-redhat-cxl-validation", "source": "samsung-electronics", "target": "red-hat", "type": "technology_or_product_validation", "label_zh": "CXL内存在RHEL环境完成互操作验证并共同开发启用指南", "label_en": "CXL memory interoperability validation in RHEL and joint enabling-guide work", "as_of": "2023-12-27", "confidence": "high", "direction_semantics": "bidirectional_validation; this encodes hardware-software interoperability, not buyer-seller flow", "evidence": [{ "title_zh": "三星与红帽验证CXL内存读写及软件互操作", "title_en": "Samsung and Red Hat validated CXL memory read/write and software interoperability", "source_title": "Samsung Electronics and Red Hat Partnership To Lead Expansion of CXL Memory Ecosystem With Key Milestone", "source_type": "company_press_release", "published_at": "2023-12-27", "source_url": "https://news.samsung.com/global/samsung-electronics-and-red-hat-partnership-to-lead-expansion-of-cxl-memory-ecosystem-with-key-milestone", "locator": "Paragraphs 87-93: RHEL 9.3 validation, enabling guide, MOU and covered memory/storage products", "confidence": "high" }] }, { "id": "samsung-montage-cxl-partnership", "source": "samsung-electronics", "target": "montage-technology", "type": "strategic_cooperation", "label_zh": "共同推进CXL 2.0控制器和内存生态", "label_en": "Partnership advancing CXL 2.0 controllers and the memory ecosystem", "as_of": "2023-05-12", "confidence": "high", "direction_semantics": "bidirectional_technology_partnership; no revenue, purchase volume or exclusivity is disclosed", "evidence": [{ "title_zh": "澜起在三星公告中确认继续CXL合作", "title_en": "Montage confirmed continued CXL partnership in Samsung's release", "source_title": "Samsung Develops Industry’s First CXL DRAM Supporting CXL 2.0", "source_type": "company_product_release", "published_at": "2023-05-12", "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-cxl-dram-supporting-cxl-2-0", "locator": "Paragraph 91: Montage president describes controller mass production and continuing partnership with Samsung", "confidence": "high" }] }, { "id": "skhynix-tsmc-hbm4-rd", "source": "sk-hynix", "target": "tsmc", "type": "joint_research_and_development", "label_zh": "共同开发HBM4并优化逻辑基础裸片与CoWoS整合", "label_en": "Joint HBM4 development and optimization of logic base-die and CoWoS integration", "as_of": "2024-04-19", "confidence": "high", "direction_semantics": "bidirectional_collaboration; TSMC contributes foundry/packaging technology and SK hynix contributes HBM design and memory integration", "evidence": [{ "title_zh": "SK海力士与台积电签署HBM4及下一代封装合作备忘录", "title_en": "SK hynix and TSMC signed an HBM4 and next-generation packaging MOU", "source_title": "SK hynix Partners with TSMC to Strengthen HBM Technological Leadership", "source_type": "company_press_release", "published_at": "2024-04-19", "source_url": "https://news.skhynix.com/sk-hynix-partners-with-tsmc-to-strengthen-hbm-technological-leadership/", "locator": "News Highlights and paragraphs 67-72: HBM4 base die, advanced foundry process, CoWoS integration and common-customer requests", "confidence": "high" }] }, { "id": "skhynix-nvidia-hbm3-supply", "source": "sk-hynix", "target": "nvidia", "type": "direct_supplier_customer_disclosure", "label_zh": "HBM3样品通过英伟达验证并计划用于H100系统", "label_en": "HBM3 samples passed NVIDIA evaluation and were planned for H100 systems", "as_of": "2022-06-08", "confidence": "high", "direction_semantics": "source_to_target_product_flow; historical disclosure dated 2022-06-08 and not a claim about current volume or share", "evidence": [{ "title_zh": "SK海力士公告HBM3供给英伟达系统", "title_en": "SK hynix announced HBM3 supply for NVIDIA systems", "source_title": "SK hynix to Supply Industry’s First HBM3 DRAM to NVIDIA", "source_type": "company_press_release", "published_at": "2022-06-08", "source_url": "https://news.skhynix.com/sk-hynix-to-supply-industrys-first-hbm3-dram-to-nvidia/", "locator": "Headline, News Highlights and body: NVIDIA evaluation, H100 integration and system shipment schedule", "confidence": "high" }] }, { "id": "skhynix-solidigm-subsidiary", "source": "sk-hynix", "target": "solidigm", "type": "corporate_control", "label_zh": "SK海力士设立美国子公司承接收购的SSD业务，并开展NAND/SSD联合产品", "label_en": "SK hynix formed the U.S. subsidiary for the acquired SSD business and developed a joint NAND/SSD product", "as_of": "2022-04-05", "confidence": "high", "direction_semantics": "source_to_target_control; SK hynix is the disclosed parent, while a separate product release supports operational collaboration without implying standalone listing", "evidence": [ { "title_zh": "Solidigm成为SK海力士美国子公司", "title_en": "Solidigm became a U.S. subsidiary under SK hynix", "source_title": "SK hynix completes the First Phase of Intel NAND and SSD Business Acquisition", "source_type": "company_press_release", "published_at": "2021-12-30", "source_url": "https://news.skhynix.com/sk-hynix-completes-the-first-phase-of-intel-nand-and-ssd-business-acquisition/", "locator": "Paragraphs 62-80: acquisition, new entity, subsidiary status and SSD business role", "confidence": "high" }, { "title_zh": "双方联合产品组合SK海力士NAND与Solidigm控制器/固件", "title_en": "Joint product combined SK hynix NAND with Solidigm controller and firmware", "source_title": "SK hynix and Solidigm Introduce First Collaborative Product", "source_type": "company_product_release", "published_at": "2022-04-05", "source_url": "https://news.skhynix.com/sk-hynix-and-solidigm-introduce-first-collaborative-product/", "locator": "News Highlights and paragraphs 65-69: P5530 architecture and co-development", "confidence": "high" } ] }, { "id": "lam-skhynix-neuromorphic-rd", "source": "lam-research", "target": "sk-hynix", "type": "joint_research_and_development", "label_zh": "参加铁电人工神经网络器件共同研发", "label_en": "Participation in joint R&D on ferroelectric artificial-neural-network devices", "as_of": "2016-10-13", "confidence": "high", "direction_semantics": "multilateral_bidirectional_research; source-target order is display-only and does not encode normal equipment sales", "evidence": [{ "title_zh": "SK海力士公告点名Lam加入器件研发合作", "title_en": "SK hynix release names Lam as a participant in device R&D", "source_title": "SK hynix Inc. Enters Global Collaboration to Develop Artificial Neural Network Devices", "source_type": "company_press_release", "published_at": "2016-10-13", "source_url": "https://news.skhynix.com/sk-hynix-inc-enters-global-collaboration-to-develop-artificial-neural-network-devices/", "locator": "Paragraphs 56-71: named parties, ferroelectric-device scope and joint-R&D description", "confidence": "high" }] }, { "id": "rambus-cxmt-dram-license", "source": "rambus", "target": "cxmt", "type": "intellectual_property_license", "label_zh": "向长鑫许可广泛的DRAM专利", "label_en": "Licence of a broad range of DRAM patents to CXMT", "as_of": "2020-04", "confidence": "high", "direction_semantics": "source_to_target_ip_rights; no royalty amount, exclusivity or patent-by-patent scope is disclosed", "evidence": [{ "title_zh": "长鑫官方确认Rambus DRAM专利许可", "title_en": "CXMT officially confirmed the Rambus DRAM patent licence", "source_title": "CXMT and Rambus Inc. Signed Patent License Agreement", "source_type": "company_press_release", "published_at": "2023-02-09", "source_url": "https://www.cxmt.com/en/news/info_4.html", "locator": "Paragraph 93: agreement timing and wide range of licensed DRAM patents", "confidence": "high" }] }, { "id": "polaris-cxmt-dram-license-acquisition", "source": "polaris-innovations", "target": "cxmt", "type": "intellectual_property_license", "label_zh": "奇梦达DRAM专利许可及独立专利收购协议", "label_en": "DRAM patent licence and separate patent-acquisition agreements covering Qimonda patents", "as_of": "2019-12-05", "confidence": "high", "direction_semantics": "source_to_target_ip_rights; the evidence discloses licence and acquisition agreements but not undisclosed commercial terms", "evidence": [{ "title_zh": "长鑫官方确认Polaris专利许可与收购协议", "title_en": "CXMT officially confirmed the Polaris licence and acquisition agreements", "source_title": "CXMT and WiLAN Subsidiary Had License and Acquisition Agreements", "source_type": "company_press_release", "published_at": "2023-02-09", "source_url": "https://www.cxmt.com/en/news/info_5.html", "locator": "Paragraph 92: December 5, 2019 agreements relating to former Qimonda DRAM patents", "confidence": "high" }] }, { "id": "cxmt-gigadevice-dram-provision", "source": "cxmt", "target": "gigadevice", "type": "direct_supplier_customer_disclosure", "label_zh": "向兆易创新提供DRAM产品与晶圆代工服务", "label_en": "Provision of DRAM products and wafer-foundry services to GigaDevice", "as_of": "2026-04-02", "confidence": "high", "direction_semantics": "source_to_target_product_and_foundry_flow; filing discloses cooperation modes but this graph does not infer future volume, share or exclusivity", "evidence": [{ "title_zh": "港交所正式通函披露兆易向长鑫采购DRAM相关产品及代工服务", "title_en": "Final HKEX circular discloses GigaDevice procurement of CXMT DRAM-related products and foundry services", "source_title": "GigaDevice Semiconductor Inc. — Circular for the 2025 Annual General Meeting", "source_type": "regulatory_filing", "published_at": "2026-04-02", "source_url": "https://www.hkexnews.hk/listedco/listconews/sehk/2026/0402/2026040204038.pdf", "locator": "Letter from the Board page 7 and Appendix I pages I-4 to I-6: 2025 actual transactions, 2026 estimate and DRAM product/foundry cooperation rationale", "confidence": "high" }] }, { "id": "gigadevice-cxmt-joint-development-ip", "source": "gigadevice", "target": "cxmt", "type": "joint_research_and_development", "label_zh": "共同产品开发平台及兆易向长鑫许可相关IP", "label_en": "Joint product-development platform and related GigaDevice IP licensing to CXMT", "as_of": "2026-01-13", "confidence": "medium", "direction_semantics": "bidirectional_product_development_with_source_to_target_ip_rights; no exclusivity or undisclosed technical scope is inferred", "evidence": [{ "title_zh": "监管文件披露共同开发协议及IP许可", "title_en": "Regulatory filing discloses joint development agreement and IP licensing", "source_title": "GigaDevice Semiconductor Inc. — Application Proof, Business (HKEX)", "source_type": "regulatory_filing", "published_at": "2026-01-13", "source_url": "https://www1.hkexnews.hk/listedco/listconews/sehk/2026/0113/11988448/sehk25121902198.pdf", "locator": "Business page 226: April 2020 joint product-development platform agreement and IP licence fees", "confidence": "medium" }] }, { "id": "cxmt-xiaomi-lpddr5-validation", "source": "cxmt", "target": "xiaomi", "type": "technology_or_product_validation", "label_zh": "12GB LPDDR5产品获得小米客户验证", "label_en": "12GB LPDDR5 product received Xiaomi customer validation", "as_of": "2023-11-28", "confidence": "high", "direction_semantics": "source_to_target_validation; customer validation is disclosed, but purchase volume, production status and exclusivity are not", "evidence": [{ "title_zh": "长鑫产品公告点名小米验证", "title_en": "CXMT product release names Xiaomi validation", "source_title": "CXMT unveils LPDDR5 product lineup", "source_type": "company_product_release", "published_at": "2023-11-28", "source_url": "https://www.cxmt.com/en/news/info_15.html", "locator": "Paragraph 92: 12GB LPDDR5 DRAM received validation from customers including Xiaomi", "confidence": "high" }] }, { "id": "cxmt-transsion-lpddr5-validation", "source": "cxmt", "target": "transsion", "type": "technology_or_product_validation", "label_zh": "12GB LPDDR5产品获得传音客户验证", "label_en": "12GB LPDDR5 product received Transsion customer validation", "as_of": "2023-11-28", "confidence": "high", "direction_semantics": "source_to_target_validation; customer validation is disclosed, but purchase volume, production status and exclusivity are not", "evidence": [{ "title_zh": "长鑫产品公告点名传音验证", "title_en": "CXMT product release names Transsion validation", "source_title": "CXMT unveils LPDDR5 product lineup", "source_type": "company_product_release", "published_at": "2023-11-28", "source_url": "https://www.cxmt.com/en/news/info_15.html", "locator": "Paragraph 92: 12GB LPDDR5 DRAM received validation from customers including Transsion", "confidence": "high" }] } ], "relationship_types": [ { "key": "direct_supplier_customer_disclosure", "name_zh": "直接供应/客户披露", "name_en": "Direct supplier/customer disclosure", "definition_zh": "第一方或监管文件点名产品/服务从一方向另一方流动；只记录被披露的产品、时间和方向，不推断份额或排他性。", "definition_en": "A first-party or regulatory source names a product/service flow from one party to another. Only the disclosed product, date and direction are recorded; share and exclusivity are not inferred." }, { "key": "technology_or_product_validation", "name_zh": "技术/产品验证", "name_en": "Technology or product validation", "definition_zh": "双方被点名完成兼容性、性能或客户验证；验证不自动等同于量产采购合同。", "definition_en": "Both parties are named in interoperability, performance or customer validation. Validation does not automatically equal a volume-purchase contract." }, { "key": "joint_research_and_development", "name_zh": "共同研发", "name_en": "Joint research and development", "definition_zh": "双方或多方被明确点名共同开发技术、产品、工艺或研究设施。", "definition_en": "Two or more named parties jointly develop technology, products, processes or research facilities." }, { "key": "strategic_cooperation", "name_zh": "战略/技术合作", "name_en": "Strategic or technology cooperation", "definition_zh": "第一方来源直接使用合作、伙伴或备忘录表述，但未形成足以标记具体产品流向的证据。", "definition_en": "A first-party source explicitly describes cooperation, partnership or an MOU, without enough evidence to encode a specific product flow." }, { "key": "intellectual_property_license", "name_zh": "知识产权许可", "name_en": "Intellectual-property licence", "definition_zh": "专利或其他IP权利被明确许可或转移；未披露条款不得推断。", "definition_en": "Patent or other IP rights are explicitly licensed or transferred; undisclosed terms are not inferred." }, { "key": "corporate_control", "name_zh": "已披露公司控制", "name_en": "Disclosed corporate control", "definition_zh": "监管文件或公司公告明确描述母子公司或控制关系；该关系与供应/客户边分开理解。", "definition_en": "A regulatory filing or company announcement explicitly describes a parent-subsidiary or control relationship; it is distinct from supplier/customer flow." }, { "key": "ecosystem_adjacency", "name_zh": "生态邻接", "name_en": "Ecosystem adjacency", "definition_zh": "公司被权威来源共同置于同一技术或标准生态，但没有披露合同、供给或共同开发。该类型必须清楚标注为非商业边，本版没有发布仅靠邻接建立的边。", "definition_en": "Companies are placed by an authoritative source in the same technology or standards ecosystem without a disclosed contract, supply flow or joint development. It must be labelled non-commercial; this release publishes no edge based on adjacency alone." } ] }